F.A. Houle, D.C. Miller, et al.
J. Photopolym. Sci. Tech.
Photodesorption of SiF3 groups, which are the principal adsorbates on a silicon surface during etching by XeF2, is found to be responsible for the etch-rate enhancement observed under illumination by low-power, cw band-gap radiation. It is proposed that desorption is stimulated by photogenerated- charge-carrier mediated chemical reaction, and not the simple charge trapping and recombination mechanism usually invoked for desorption from semiconductor surfaces. © 1988 The American Physical Society.
F.A. Houle, D.C. Miller, et al.
J. Photopolym. Sci. Tech.
F.A. Houle
The Journal of Chemical Physics
F.A. Houle, W.D. Hinsberg, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
K.A. Singmaster, F.A. Houle, et al.
Proceedings of SPIE 1989