Photoluminescent characterization of GaAs solar cells

Abstract

Photoluminescence excitation measurements are shown to accurately determine the spectral response of Ga1-xAlxAs-GaAs heterojunction solar cells. The technique is applicable to as-grown structures prior to processing into final devices and can also be used to study postgrowth techniques designed to enhance the spectral response of such devices. The measurements indicate that some surface recombination passivation is obtained with anodization.