Conference paper
SILICIDE CONTACT AND GATE IN MICROELECTRONIC DEVICES.
K.N. Tu
International Symposium on Methods and Materials in Microelectronic Technology 1982
Phase separation has been found to be a general phenomenon among many alloy-Si interactions at temperatures as high as 800°C. We have studied these interactions with alloys consisting of a near-noble metal of Ni, Pd, and Pt, and a refractory metal of Cr, V, and W. The interaction produces a silicide of the near-noble metals next to the Si and an outer layer of silicide of the refractory metals. No evidence for ternary formation has been found.
K.N. Tu
International Symposium on Methods and Materials in Microelectronic Technology 1982
K.N. Tu
Scripta Metallurgica
W.K. Chu, K.N. Tu
Applied Physics Letters
B.Z. Weiss, K.N. Tu, et al.
Scripta Metallurgica