Revanth Kodoru, Atanu Saha, et al.
arXiv
The phenomenon of slow amorphization during a constant-temperature and constant-pressure thin-film reaction is explained by a kinetic model emphasizing the rate of transition. We assume that the reaction obeys a maximum time-dependent rather than time-independent negative free-energy change. The product persists in the metastable state due to a high activation barrier to later transition. An amorphous Rh-Si alloy formed by thermally reacting a crystalline Rh thin film and single-crystal Si is reported. © 1991 The American Physical Society.
Revanth Kodoru, Atanu Saha, et al.
arXiv
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
John G. Long, Peter C. Searson, et al.
JES
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993