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Publication
IRPS 2018
Conference paper
PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation
Abstract
Using devices with well passivated interfaces and reduced electron trapping, it is demonstrated that significant interface-state generation occurs during PBTI stress in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks. These observations on capacitors imply that the impact of interface-state generation on mobility and subthreshold-degradation need to be monitored in III-V nFET in addition to electron trapping in the gate stack.