About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IRPS 2018
Conference paper
Effect of HCI degradation on the variability of MOSFETS
Abstract
The effect of HCI (hot-carrier injection) degradation on the variability of FETs is studied with a novel test structure. Using a space-and time-efficient technique, a large number of degradation measurements can be taken in the time usually required for a single device. Studies with this structure have shown that variability is actually reduced by the degradation caused by HCI stress.