L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Patterning of 100 nm critical dimension features using X-ray proximity lithography is discussed. Lithographic performance is shown using photoresists APEX-E, UV-4 and an experimental formulation of ESCAP photoresist. Conditions to pattern isolated and nested lines at maximum permissible gap is discussed. ©1997TAPJ.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
T.N. Morgan
Semiconductor Science and Technology