S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Patterning of 100 nm critical dimension features using X-ray proximity lithography is discussed. Lithographic performance is shown using photoresists APEX-E, UV-4 and an experimental formulation of ESCAP photoresist. Conditions to pattern isolated and nested lines at maximum permissible gap is discussed. ©1997TAPJ.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
J.C. Marinace
JES
P. Alnot, D.J. Auerbach, et al.
Surface Science