Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si

Abstract

Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxide-semiconductor structures having ultrathin rhenium films as metal electrode and Hf O2 films as dielectric on Si(001). Isotopic tracing, nuclear reaction analysis, narrow resonant nuclear reaction profiling, and x-ray photoelectron spectroscopy were used to pursue this investigation. For annealing temperatures below 400 °C, oxygen from the gas phase incorporates mainly in near-surface regions of the overlying Re cap. Significant oxygen incorporation into the Hf O2 films is observed only after annealing at 500 °C. The present results are discussed considering that supplying oxygen to the metal/dielectric interface can cause device threshold voltage shifts. © 2006 American Institute of Physics.