M. Najmzadeh, K. Boucart, et al.
Solid-State Electronics
We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems. © 2008 IEEE.
M. Najmzadeh, K. Boucart, et al.
Solid-State Electronics
K.M. Indlekofer, J. Knoch, et al.
Physical Review B - CMMP
J. Knoch, B. Lengeler, et al.
IEEE Transactions on Electron Devices
H. Stahl, J. Appenzeller, et al.
Physical Review Letters