R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
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Synthetic Metals
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