K.A. Chao
Physical Review B
Paper
Optical analysis of wet chemically etched InGaAs/InP wires
Abstract
We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.
Related
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering