Publication
Physics Letters A
Paper

On the mechanism of cluster emission in sputtering

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Abstract

The intensity and the energy distribution of Si+n cluster ions emitted from clean silicon have been measured for different target orientations as a function of the primary ion energy (3-30 keV) and the projectile mass (noble gas ion bombardment). The results favour the idea that clusters are emitted as such rather than being produced by vacuum recombination of individually emitted atoms and ions. © 1979.

Date

08 Jan 1979

Publication

Physics Letters A

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