Secondary-ion emission from silicon bombarded with atomic and molecular noble-gas ions

Abstract

The emission of Si+ from a clean silicon surface has been studied for bombardment with various atomic and molecular noble gas ions at energies between 1.5 and 30 keV. It was found that the degree of ionization of Si+ depends strongly (l̃inearly) on the projectile energy but only weakly on the projectile mass. These results suggest that the degree of ionization is heavily affected by the (dynamic) perturbation of the bulk properties of the bombarded area which increases with increasing nuclear energy deposition. © 1979.