I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Ion-excited Auger electron emission from silicon has been investigated for 2 to 30 keV noble gas ion bombardment. It was found that Si L shell excitation is mostly due to symmetric SiSi collisions. The Auger spectrum is characterized by several relatively narrow (but Doppler broadened) L2, 3MN lines originating from sputtered atoms and a broad bulk-like L2, 3VV line. Comparison between the L2, 3VV line and the electron-excited L2, 3VV line indicates that the density and/or the population of states in a collision cascade is markedly different from the unperturbed case. © 1979.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
J. Tersoff
Applied Surface Science
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
K.A. Chao
Physical Review B