F.R. McFeely, E. Cartier, et al.
Physical Review Letters
Paper
On the enhanced electron mobility in strained-silicon inversion layers
Abstract
The calculation of electron mobility in strained-silicon inversion layers accounting for scattering with phonons and interface roughness was studied. The strong carrier confinement in inversion layers removed the sixfold degeneracy of the conduction-band minima. The momentum relaxation rates relative to intravalley scattering with acoustic phonons were treated using the anisotropic model.
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