Publication
Applied Physics Letters
Paper

Observation of semiconductor-semimetal transition in InAs-GaSb superlattices

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Abstract

The semiconductor-semimetal transition in InAs-GaSb superlattices is observed at a layer thickness in the vicinity of 100 Å. The transition manifests itself in an increase in the measured carrier concentration as a result of electron transfer from GaSb to InAs when ground subbands of electrons and heavy holes cross each other. Shubnikov-de Haas measurements confirm the carrier enhancement in the semimetallic state.

Date

07 Aug 2008

Publication

Applied Physics Letters

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