Conference paper
LOW-TEMPERATURE MAGNETOTRANSPORT IN InAs-GaSb QUANTUM WELLS.
E. Mendez, S. Washburn, et al.
ICPS Physics of Semiconductors 1984
The semiconductor-semimetal transition in InAs-GaSb superlattices is observed at a layer thickness in the vicinity of 100 Å. The transition manifests itself in an increase in the measured carrier concentration as a result of electron transfer from GaSb to InAs when ground subbands of electrons and heavy holes cross each other. Shubnikov-de Haas measurements confirm the carrier enhancement in the semimetallic state.
E. Mendez, S. Washburn, et al.
ICPS Physics of Semiconductors 1984
L.L. Chang
Solid-State Electronics
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Applied Physics Letters
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