About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Carrier screening effects in semimetallic InAs single-quantum wells
Abstract
Measurements of the resistivity between 40 mK and 1 K are presented for electron-hole systems comprised of InAs single-quantum wells clad with Ga1-xAlxSb for x=0, 0.15, and 0.30. In contrast to previous studies, no logarithmically increasing resistivity with decreasing temperature is observed, and for samples with hole carriers we find a weakly decreasing resistivity. Measurements of the low-field magnetotransport, as well as the resistivity at higher temperatures, inidicate that the decreasing resistivity is related to an increasing electron mobility due to the presence of hole carriers, and that in the low-temperature limit the electrons are scattered primarily by holes and impurity charges located at the interface. © 1989 The American Physical Society.