Publication
Physical Review Letters
Paper

Diluted magnetic III-V semiconductors

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Abstract

A new diluted magnetic III-V semiconductor of In1-xMnxAs (x0.18) has been produced by molecular-beam epitaxy. Films grown at 300°C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200°C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps. © 1989 The American Physical Society.

Date

23 Oct 1989

Publication

Physical Review Letters

Authors

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