S. Von Molnar, S. Methfessel
Journal of Applied Physics
A new diluted magnetic III-V semiconductor of In1-xMnxAs (x0.18) has been produced by molecular-beam epitaxy. Films grown at 300°C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200°C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps. © 1989 The American Physical Society.
S. Von Molnar, S. Methfessel
Journal of Applied Physics
H. Ohno, K. Matsuzaki, et al.
Surface Science
T. Siegrist, S. Von Molnar, et al.
Applied Physics Letters
H. Munekata, L.L. Chang, et al.
Journal of Crystal Growth