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Publication
Applied Physics Letters
Paper
Stress-relieved regrowth of silicon on sapphire by laser annealing
Abstract
We report on an annealing process which controls the stress in SOS. By laser power inputs of various durations, we regrow the Si on a compressed sapphire surface. The room temperature stress in Si correlates with the time scale of the annealing process. The effect can be understood in terms of thermal stress at the sapphire surface.