Publication
Applied Physics Letters
Paper

Stress-relieved regrowth of silicon on sapphire by laser annealing

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Abstract

We report on an annealing process which controls the stress in SOS. By laser power inputs of various durations, we regrow the Si on a compressed sapphire surface. The room temperature stress in Si correlates with the time scale of the annealing process. The effect can be understood in terms of thermal stress at the sapphire surface.

Date

23 Jul 2008

Publication

Applied Physics Letters

Authors

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