Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon

Abstract

An experiment was carried out to study oxidation-enhanced and oxidation-retarded diffusion (OED and ORD) of Sb in (100) and (111) Si wafers oxidized in dry O2 at 1160°C. The ORD data of (100) wafers agree well with those of Mizuo and Higuchi and with the prediction of a model assuming that Si self-interstitials and vacancies coexist in Si in thermal equilibrium at high temperatures. A small adjustment to the interstitial supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects vacancies into (111) wafers in addition to the normal mechanism of interstitial injection due to SiO2 growth.