DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.
B.J. Ginsberg, M. Arienzo, et al.
ECS Meeting 1983
The first bipolar transistor using selective epitaxy for base formation in a double-poly self-aligned structure is presented. The intrinsic base was formed by a selective-epitaxial deposition in place of ion implantation. Such epitaxial base processes are capable of achieving a narrow intrinsic base width and a high Gummel number which will lower the pinched intrinsic base sheet resistance Rbi and base-emitter diffusion capacitance C^ compared to advanced ion-implanted processes. A selective epitaxial base can be simply introduced in advanced double-poly self-aligned processes compared to a nonselective epitaxial layer. © 1988 IEEE
B.J. Ginsberg, M. Arienzo, et al.
ECS Meeting 1983
J.N. Burghartz, A.O. Cifuentes, et al.
VLSI Technology 1993
J.N. Burghartz, M. Soyuer, et al.
BCTM 1996
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VLSI-TSA 1991