Steven H. Voldman, Vaughn P. Gross, et al.
Journal of Electrostatics
The semiconductor transport equations are solved by a hybrid finite-element method with current specified as a boundary condition at device contacts. Single carrier or bipolar devices of arbitrary shape, operating under transient or steady-state conditions, can be simulated with current sources or simple circuit elements connected to device terminals. This paper describes the numerical technique and device applications. © 1983 by The Institute of Electrical and Electronics Engineers, Inc.
Steven H. Voldman, Vaughn P. Gross, et al.
Journal of Electrostatics
Mario M. Pelella, Jerry G. Fossum, et al.
IEEE Electron Device Letters
Steven E. Laux, Bertrand M. Grossman
IEEE T-ED
Steven E. Laux, Bertrand M. Grossman
IEEE TCADIS