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Publication
IEEE T-ED
Paper
Numerical Solution of the Semiconductor Transport Equations with Current Boundary Conditions
Abstract
The semiconductor transport equations are solved by a hybrid finite-element method with current specified as a boundary condition at device contacts. Single carrier or bipolar devices of arbitrary shape, operating under transient or steady-state conditions, can be simulated with current sources or simple circuit elements connected to device terminals. This paper describes the numerical technique and device applications. © 1983 by The Institute of Electrical and Electronics Engineers, Inc.