Jeffrey Y.-F. Tang, Steven E. Laux
IEEE TCADIS
A method for incorporating impact ionization into a general control-volume formulation of semiconductor transport is described. The methods for electric-field and current-density vector evaluation and generated charge partitioning within a two-dimensional triangular element are given. The techniques employed allow device breakdown to be accurately determined independent of mesh orientation to current flow direction. The avalanche breakdown of a 1- µ m n-MOSFET illustrates the approach. Regions where the drain current is a multivalued function of drain voltage are directly and self-consistently calculated for this device. © 1985 IEEE
Jeffrey Y.-F. Tang, Steven E. Laux
IEEE TCADIS
Arvind Kumar, Jakub Kedzierski, et al.
IEEE Transactions on Electron Devices
Steven E. Laux
IEEE Transactions on Electron Devices
Arvind Kumar, Steven E. Laux, et al.
Physical Review B