About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Numerical simulation of electrochemical planarization of copper overburden
Abstract
Numerical simulations are employed to demonstrate the daunting challenges involved in utilizing electrochemical polishing technologies as an alternative to low-down-force chemical mechanical planarization. Results show that small-aspect-ratio topographical features sitting on a relatively thin overburden are impossible to planarize by conventional electropolishing. Electrochemical mechanical planarization (E-CMP), where an anodic dissolution process is coupled with a polishing pad, is a more viable approach. Numerical simulations are compared to results obtained by E-CMP as a means of establishing an effective diffusion-layer thickness and as further demonstration of the infeasibility of electropolishing. © 2005 The Electrochemical Society. All rights reserved.