Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
We present the normal-state resistance of La2-xSrxCuO4 thin films under epitaxial strain, measured below Tc by applying pulsed fields up to 60 T. We compare these data with earlier data on YBa2Cu3Ox thin films in the underdoped regime. The data are analyzed in terms of the recently proposed ID quantum transport model and charge-stripe models. The high field data have been used to identify the new regimes and dimensional crossovers caused by the formation of stripes and their interplay with disorder. © 2000 Elsevier Science B. V. All rights reserved.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering