K.N. Tu
Materials Science and Engineering: A
The nitrogen interface engineering with Al 2O 3 capacitors for improved thermal stability was analyzed. It was observed that the bottom SiN x was formed with NH 3anneal. and top SiN x was formed with ultrahigh vacuum chemical vapor deposition (UHVCVD). The thermal stability beyond the 1050°C-30 s anneal for the capacitors with UHVCVD SiN x was also discussed. It was found that the leakage current remains below 1×10 -8 A/cm 2 after four thermal stresses to 1000°C and exceeding 1000°C.
K.N. Tu
Materials Science and Engineering: A
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989