Nitrogen interface engineering in Al ₂O ₃ capacitors for improved thermal stability

Abstract

The nitrogen interface engineering with Al 2O 3 capacitors for improved thermal stability was analyzed. It was observed that the bottom SiN x was formed with NH 3anneal. and top SiN x was formed with ultrahigh vacuum chemical vapor deposition (UHVCVD). The thermal stability beyond the 1050°C-30 s anneal for the capacitors with UHVCVD SiN x was also discussed. It was found that the leakage current remains below 1×10 -8 A/cm 2 after four thermal stresses to 1000°C and exceeding 1000°C.