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Publication
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Nitrogen interface engineering in Al 2O 3 capacitors for improved thermal stability
Abstract
The nitrogen interface engineering with Al 2O 3 capacitors for improved thermal stability was analyzed. It was observed that the bottom SiN x was formed with NH 3anneal. and top SiN x was formed with ultrahigh vacuum chemical vapor deposition (UHVCVD). The thermal stability beyond the 1050°C-30 s anneal for the capacitors with UHVCVD SiN x was also discussed. It was found that the leakage current remains below 1×10 -8 A/cm 2 after four thermal stresses to 1000°C and exceeding 1000°C.