Silicon wafers were nitrided in a multiwafer plasma system at low temperatures (< 850°C). An argon plasma (400 kHz rf plasma) was used to which small quantities (approximately 2-8 %) of NH3, N2 or mixtures of N2 and H2 were added. As the rf power was increased, the film thickness as well as the etch rate (in buffered HF) increased. The rate of film growth was found to be slower than that for oxidation in a similar type of plasma system. The effects of variation of power and gas composition on film composition and etch rate are discussed. © 1984 AIME.