Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Wide-band-gap semiconductors typically can be doped either n type or p type, but not both. Compensation by native point defects has often been invoked as the source of this difficulty. We examine the wide-band-gap semiconductor ZnSe with first-principles total-energy calculations, using a mixed-basis program for an accurate description of the material. Formation energies are calculated for all native point defects in all relevant charge states; the effects of relaxation energies and vibrational entropies are investigated. The results conclusively show that native-point-defect concentrations are too low to cause compensation in stoichiometric ZnSe. We further find that, for nonstoichiometric ZnSe, native point defects compensate both n-type and p-type material; thus deviations from stoichiometry cannot explain why ZnSe can be doped only one way. © 1992 The American Physical Society.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989