Role of native defects in wide-band-gap semiconductors
- D.B. Laks
- C.G. Van De Walle
- et al.
- 1991
- Physical Review Letters
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9 results for G.F. Neumark
Theory of interband auger recombination in n-type silicon
- D.B. Laks
- G.F. Neumark
- et al.
- 1988
- Physical Review Letters
Temperature evolution of excitonic luminescence in nitrogen doped zinc selenide
- C. Kothandaraman
- G.F. Neumark
- et al.
- 1997
- Applied Physics Letters
Acceptor doping in ZnSe versus ZnTe
- David B. Laks
- Chris G. Van De Walle
- et al.
- 1993
- Applied Physics Letters
First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe
- Chris G. Van De Walle
- D.B. Laks
- et al.
- 1993
- Physical Review B
Native defects and self-compensation in ZnSe
- D.B. Laks
- C.G. Van De Walle
- et al.
- 1992
- Physical Review B
Solubilities, defect reactions and doping limits in ZnSe
- Chris G. Van de Walle
- D.B. Laks
- et al.
- 1992
- Journal of Crystal Growth
Effect of indium on the properties of DX centers in Si-doped In y(Ga0.3Al0.7)1-yAs
- L.S. Pann
- M.A. Tischler
- et al.
- 1990
- Journal of Applied Physics
Accurate interband-Auger-recombination rates in silicon
- D.B. Laks
- G.F. Neumark
- et al.
- 1990
- Physical Review B