Conference paper
MESFET COMPATIBLE IMSM DETECTORS.
D.L. Rogers
TMPEO 1986
High-performance interdigitated metal-semiconductor-metal detectors and photoreceivers have been fabricated using a standard refractory-gate, ion-implanted MESFET process which was also used to fabricate complex digital circuits. A rise time of 110 ps has been observed for a detector-preamplifier combination, implying a small-signal bandwidth of about 3 GHz. Detector responsivities as high as 0. 45 A/W, and dark currents as low as 5 nA have been observed.
D.L. Rogers
TMPEO 1986
L. Schares, C.L. Schow, et al.
ECOC 2005
D.L. Rogers
LEOS 2001
J.D. Crow, L. Comerford, et al.
Proceedings of SPIE 1989