H. Wu, J. Tierno, et al.
ISSCC 2003
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
H. Wu, J. Tierno, et al.
ISSCC 2003
L. Schares, C.L. Schow, et al.
ECOC 2005
J. Schaub, S.M. Csutak, et al.
LEOS 2002
S.M. Csutak, J. Schaub, et al.
IEE Proceedings: Optoelectronics