L. Schares, C.L. Schow, et al.
ECOC 2005
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
L. Schares, C.L. Schow, et al.
ECOC 2005
B. Yang, J. Schaub, et al.
LEOS 2002
S.M. Csutak, J. Schaub, et al.
IEEE Photonics Technology Letters
Jente B. Kuang, Keith A. Jenkins, et al.
ESSCIRC 2013