MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF III-V/III-V AND IV/III-V HETEROSTRUCTURES.

Abstract

Semiconductor heterostructures, both single interfaces and superlattices, have been made by molecular beam epitaxy (MBE) for many different materials. In this paper we describe the MBE growth of a variety of III-V/III-V systems including GaAs-Ga//1// minus //xAl//xAs, InAs-GaAs, In//1// minus //xGa//xAs-In//1// minus //yGa//yAs, GaSb-GaAs, InAs-GaSb, In//1// minus //xGa//xAs-GaSb//1// minus //yAs//y, AlSb-GaAs, AlSb-GaSb and AlSb-InAs, and two IV/III-V systems of Ge-GaAs and Si-GaP. The various properties of these systems are also described including metallurgical, structural, optical and electrical characteristics.