Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Paper
Quantum wells of InAs between AlSb
Abstract
Quantum wells consisting of a single InAs layer confined between two AlSb layers were made. and they exhibited characteristic two-dimensional electron behavior from magneto-transport measurements. Unexpectedly, the electrons appeared to be predominantly extrinsic in nature. unlike the situation in the InAs-GaSb system. © 1984.
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