About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Quantized hall effect in single quantum wells of InAs
Abstract
We report magnetotransport measurements, down to 0.55 K and up to 28 T, on GaSb-InAs-GaSb heterostructures. At moderate and high fields, the magnetoresistance vanishes and the Hall resistance shows plateaus at values of h ie2 when i (i = 1, 2, 3, ...) magnetic levels are fully occupied. In addition, in high mobility samples, new features appear, the most prominent being a plateau at i = 5 2. The characteristics of these features are different from those observed in GaAs-GaAlAs at fractional occupation numbers, suggesting that they are likely related to the presence of holes in this system. © 1984.