Modification of the absorption edge of GaAs arising from hot-electron effects

Abstract

We have observed a large enhancement of the electric-field-induced optical absorption arising from hot-electron effects in n-type GaAs at 77 K. The magnitude and field dependence of the enhancement can be approximately accounted for by a theory attributing the effect to broadening of the final states of the optical transitions by interaction with the nonequilibrium optical phonons produced by the hot electrons. © 1973 The American Physical Society.