Publication
Physical Review B
Paper

Modification of the absorption edge of GaAs arising from hot-electron effects

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Abstract

We have observed a large enhancement of the electric-field-induced optical absorption arising from hot-electron effects in n-type GaAs at 77 K. The magnitude and field dependence of the enhancement can be approximately accounted for by a theory attributing the effect to broadening of the final states of the optical transitions by interaction with the nonequilibrium optical phonons produced by the hot electrons. © 1973 The American Physical Society.

Date

15 Dec 1973

Publication

Physical Review B

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