Boron atom distributions in ion-implanted silicon by the (n,⁴He) nuclear reaction

Abstract

The concentration distribution of 10B atoms ion-implanted into silicon has been determined with a new nuclear reaction technique, The concentration profiles for implantations in the energy range 40-500 keV were determined before and after annealing at 900°C for 30 min and show that enhanced diffusion, because of radiation damage, is of minor importance. The profile ranges and widths have been compared to LSS theory and to other experiments. © 1972 The American Institute of Physics.