Measurement of VLSI Power Supply Current by Electron-Beam Probing

Keith A. Jenkins; Robert L. Franch

doi:10.1109/4.135341

IEEE Journal of Solid-State Circuits

Paper

01 Jan 1992

Measurement of VLSI Power Supply Current by Electron-Beam Probing

View publication

Abstract

The measurement of power supply noise and current by electron-beam probing is described. Noise measurements can be made on the chip under test, and current measurements can be made on the circuit board. © 1992 IEEE

Paper

A high aspect-ratio silicon substrate-via technology and applications: Through-wafer interconnects for power and ground and faraday cages for SOC isolation

Joyce H. Wu, Jesds A. Del Alamo, et al.

Technical Digest - International Electron Devices Meeting

Paper

A 3.5-ns/77 K and 6.2-ns/300 K 64K CMOS RAM with ECL Interfaces

Terry I. Chappell, Stanley E. Schuster, et al.

IEEE Journal of Solid-State Circuits

Paper

Time-resolved measurements of self-heating in SOI and strained-silicon MOSFETs using photon emission microscopy

Stas Polonsky, Keith A. Jenkins

IEEE Electron Device Letters

Paper

Identification of gate electrode discontinuities in submicron CMOS technologies, and effect on circuit performance

Keith A. Jenkins, Joachim N. Burghartz, et al.

IEEE Transactions on Electron Devices

View all publications

Abstract

Related

A high aspect-ratio silicon substrate-via technology and applications: Through-wafer interconnects for power and ground and faraday cages for SOC isolation

A 3.5-ns/77 K and 6.2-ns/300 K 64K CMOS RAM with ECL Interfaces

Time-resolved measurements of self-heating in SOI and strained-silicon MOSFETs using photon emission microscopy

Identification of gate electrode discontinuities in submicron CMOS technologies, and effect on circuit performance