About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Electronics Letters
Paper
Low Threshold Current GaAs/AIGaAs Grin-Sch Lasers Grown by Molecular Beam Epitaxy on Si3N4 Masked Substrates
Abstract
High-performance single-quantum-well graded-refractive-index separate confinement heterostructure (SQW GRIN-SCH) lasers have been grown by molecular beam epitaxy on Si3N4 patterned GaAs (100) substrates. Lasers grown on stripe windows orientated in the [011] direction have optical waveguiding and current confinement supplied by facetting occurring during growth. Lasers fabricated on 10 μm wide Si3N4. openings have threshold currents as low as 15 mA for a 500 μm-long cavity. The current density required to reach optical transparency is 144 A/cm2, an internal quantum efficiency of 81%, and a peak optical power of 70 mW per facet has been obtained. Device performance comparable to ridge lasers is observed in a self-aligned laser process. © 1988, The Institution of Electrical Engineers. All rights reserved.