Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Fundamental equilibrium considerations derived from the Si/H2O/O2/SiO2 system have been successfully employed in the design and operation of a novel low temperature epitaxial silicon process. Films have been deposited in the range 750° < T < 850°C, with all resulting material epitaxial. TEM studies showed the transition to high quality, low defect density material to occur between 750° and 800°C, and such films were found to be of high chemical purity as well. In addition, UHV/CVD is shown to be a high throughput multiwafer system, achieving good film uniformities in a high wafer packing density environment, attributable to operation in the low pressure limit of chemical kinetics. © 1986, The Electrochemical Society, Inc. All rights reserved.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
A. Krol, C.J. Sher, et al.
Surface Science
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Hiroshi Ito, Reinhold Schwalm
JES