Low-frequency noise of 90nm nFETs: Hot-carrier degradation and deuterium effect

Abstract

We show here that the low-frequency noise (LFN) of 90nm nFETs can increase considerably due to hot-carrier stress. Measurements reveal noise degradation for both linear and saturation regions of operation. The use of deuterium processing retards the noise degradation and improves the noise lifetime by more than 20x. © 2004 IEEE.