Low thermal budget antimony/phosphorus NMOS technology for CMOS
D.L. Harame, E. Ganin, et al.
IEDM 1991
Experiments are described in which ∼0.2-s-wide argon laser pulses are incident on a 6-μm-thick n- Si epitaxial layer. Local melting and refreezing of both the layer and a small volume of the underlying p+ boron-doped Si substrate occur. In the molten phase, boron diffusion from the substrate is sufficient to make a low resistance path between the front surface and the substrate, with a nearly uniform dopant concentration of 5×10 18/cm3. The melted/recrystallized front surface diameter is ∼50 μm. Unique features and applications of this type of substrate contacting are discussed.
D.L. Harame, E. Ganin, et al.
IEDM 1991
J.B. Kuang, M.J. Saccamango, et al.
IEEE International SOI Conference 1999
D.L. Harame, E.F. Crabbe, et al.
IEDM 1992
J.B. Kuang, M.J. Saccamango, et al.
International Journal of Electronics