Paper

01 Jan 1986

IVB-1 Tunneling Component in Polysilicon Self-Aligned Bipolar Transistors

View publication

Abstract

No abstract available.

Related

Paper

Time-of-flight measurements of minority-carrier transport in p-silicon

Conference paper

A 26 ps self-aligned epitaxial silicon base bipolar technology

Paper

Methodology for Bipolar Process Diagnosis and Its Application to Advanced Self-Aligned Bipolar Transistors

Conference paper

Selective epitaxy base for bipolar transistors

View all publications