Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. Narayanan, V.K. Paruchuri, et al.VLSI Technology 2006
PaperWaveform Measurements in High-Speed Silicon Bipolar Circuits Using a Picosecond Photoelectron Scanning Electron MicroscopePaul May, Jean-Marc Halbout, et al.IEEE T-ED
PaperA Submicrometer High-Performance Bipolar TechnologyTze-Chiang Chen, Kai-Yap Toh, et al.IEEE Electron Device Letters
PaperEffect of Off-Axis Implant on the Characteristics of Advanced Self-Aligned Bipolar TransistorsChing-Te Chuang, G.P. Li, et al.IEEE Electron Device Letters
