On the effects of implantation of ions in the MeV energy range into silicon

Abstract

The effects of MeV phosphorus implantation and subsequent process steps on the electrical characteristics of p-channel field-effect transistors (FET), Schottky barrier diodes and p-n junctions were studied. The observed I-V characteristics can be explained in terms of spatially localized defects induced by the high-energy implantation and correlate well with the results using Monte Carlo simulation and C-V profiling techniques. © 1986.