Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The effects of MeV phosphorus implantation and subsequent process steps on the electrical characteristics of p-channel field-effect transistors (FET), Schottky barrier diodes and p-n junctions were studied. The observed I-V characteristics can be explained in terms of spatially localized defects induced by the high-energy implantation and correlate well with the results using Monte Carlo simulation and C-V profiling techniques. © 1986.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics