About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Solid-State Electronics
Paper
On the effects of implantation of ions in the MeV energy range into silicon
Abstract
The effects of MeV phosphorus implantation and subsequent process steps on the electrical characteristics of p-channel field-effect transistors (FET), Schottky barrier diodes and p-n junctions were studied. The observed I-V characteristics can be explained in terms of spatially localized defects induced by the high-energy implantation and correlate well with the results using Monte Carlo simulation and C-V profiling techniques. © 1986.