Time-of-flight measurements of minority-carrier transport in p-silicon

Abstract

The electric field dependence of electron mobilities in p-type silicon with doping density of 4.5×1016 cm-3 at room temperature was measured using a time-of-flight technique. It was found that the electron mobility at zero field is very close to that in n-type silicon of equivalent doping density; however, it decreases rapidly with electric field in a range from 0 to 0.2 kV/cm and more gradually at higher fields. The effect is attributed to the electron-hole scattering.