Conference paper
Low-temperature operation of silicon bipolar ECL circuits
J.D. Cressler, D.D. Tang, et al.
ISSCC 1989
The electric field dependence of electron mobilities in p-type silicon with doping density of 4.5×1016 cm-3 at room temperature was measured using a time-of-flight technique. It was found that the electron mobility at zero field is very close to that in n-type silicon of equivalent doping density; however, it decreases rapidly with electric field in a range from 0 to 0.2 kV/cm and more gradually at higher fields. The effect is attributed to the electron-hole scattering.
J.D. Cressler, D.D. Tang, et al.
ISSCC 1989
P.J. Wang, F. Fang, et al.
Applied Physics Letters
R.B. Dunford, E.E. Mitchell, et al.
Journal of Physics Condensed Matter
G.A. Sai-Halasz, F. Fang, et al.
Applied Physics Letters