Conference paper
On-chip circuit for monitoring frequency degradation due to NBTI
Kevin Stawiasz, Keith A. Jenkins, et al.
IRPS 2008
Paper
Ion Microbeam Probing of Sense Amplifiers to Analyze Single Event Upsets in a CMOS DRAM
Abstract
- By irradiating individual nodes of a CMOS DRAM composed of p-channel cells with a collimated microbeam of alpha particles, the relative sensitivity of circuit elements to single event upsets (SEU's) has been measured. The results show that alpha-particle hits on sensitive nodes within the sense amplifiers dominate the SEU rate. This domination is due to the presence in the sense amps of n-channel devices which can collect charge from the entire ion track. In contrast, the memory cells and bit lines contain only p+ nodes in an n-well, which shields them from charge generated in the substrate. © 1991 IEEE
Related
Tony Tae-Hyoung Kim, Pong-Fei Lu, et al.
IEEE Transactions on VLSI Systems
Chirag S. Patel, Paul S. Andry, et al.
IITC 2005
Mark B. Ketchen, Manjul Bhushan, et al.
IEEE International SOI Conference 2005