Modeling of alpha-induced single event upsets for 45 nm node SOI devices using realistic C4 and 3D circuit geometries

Abstract

Novel techniques have been applied to model realistic alpha particle source distributions in complex back-end-of-the-line geometries. Rigorous Monte Carlo simulations with high resolution have been performed to analyze the charge collection in 45 nm SOI test devices. These studies reveal soft fail sensitivity to the topologies of the alpha particle source and the BEOL structure. © 2009 IEEE.