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Publication
Journal of Applied Physics
Paper
Interstitial oxygen reduction in silicon at thermal donor temperatures
Abstract
Silicon wafers with a range of initial oxygen and carbon concentration were annealed at 450, 475, and 500°C for up to 500 h with the interstitial oxygen concentration being monitored every 20 h. It is found that the rate of oxygen loss scales as the fifth power of oxygen concentration for wafers annealed below 500°C.