Roughness analysis of Si1-xGex films
R.M. Feenstra, M.A. Lutz, et al.
MRS Fall Meeting 1994
We report the effect of La2O3 capping layers on HfO2/SiO2/Si dielectrics, proposed for use in threshold voltage tuning of field effect transistors. Depth profiling with medium energy ion scattering shows that an initial surface layer of La2O 3 diffuses through the HfO2 at elevated temperatures, ultimately converting some of the thin interfacial SiO2 into a silicate. Core-level photoemission measurements indicate that the additional band-bending induced by the La2O3 only appears after diffusion, and the added charge resides between the HfO2 and the substrate. © 2009 American Institute of Physics.
R.M. Feenstra, M.A. Lutz, et al.
MRS Fall Meeting 1994
L.Å. Ragnarsson, S. Guha, et al.
Applied Physics Letters
S. Guha, H. Munekata, et al.
Journal of Applied Physics
M. Horn-Von Hoegen, M. Copel, et al.
Physical Review B