F.K. LeGoues, M.C. Reuter, et al.
Physical Review Letters
We have investigated the effect of H passivation on the deposition of Co on Si(111). The H terminated surface has fewer nucleation sites for silicide formation than either the bare (7×7) surface or the boron (3×3)R30°. This leads to a growth mode dominated by the formation of sparse nonepitaxial islands, which grow laterally to merge. The H passivated (1×1) surface does not contain Si adatoms, unlike the (7×7) and boron (3×3)R30°surfaces, which must be the nucleation site for cobalt silicide formation on Si(111). © 1994 American Institute of Physics.
F.K. LeGoues, M.C. Reuter, et al.
Physical Review Letters
F.M. Ross, J. Tersoff, et al.
Journal of Electron Microscopy
D.G.J. Sutherland, H. Akatsu, et al.
Journal of Applied Physics
M. Copel, R.M. Tromp
Review of Scientific Instruments