Integrated multilayer RF passives in silicon technology

Abstract

The integration of RF systems on silicon requires that, besides the high-frequency active devices, high-quality passive components be provided by the fabrication process. This requirement stresses particularly the availability of low-resistive multilayer interconnects for the integration of inductors, transformers, and MIM-capacitors. This paper shows how such components can be engineered either based on commercially available processes or by introducing new structures and materials to silicon technology.