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Publication
IEEE Electron Device Letters
Paper
Integrated enhancement- and depletion-mode FET's in modulation-doped Si/SiGe heterostructures
Abstract
In this letter, we present results of enhancement and depletion mode transistors fabricated on the same layer structure of Si/SiGe, without using gate recess. The current in the enhancement mode device is controlled by a pn-junction, while that of the depletion-mode device is controlled by a Schottky barrier. A peak transconductance of 327 mS/mm and 417 mS/mm has been achieved in 0.5-μm gate length depletion and enhancement-mode transistors, respectively.