Conference paper
1.1 GHz MSM photodiodes on relaxed Si1-xGex grown by UHV-CVD
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
In this letter, we present results of enhancement and depletion mode transistors fabricated on the same layer structure of Si/SiGe, without using gate recess. The current in the enhancement mode device is controlled by a pn-junction, while that of the depletion-mode device is controlled by a Schottky barrier. A peak transconductance of 327 mS/mm and 417 mS/mm has been achieved in 0.5-μm gate length depletion and enhancement-mode transistors, respectively.
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
J. Wróbel, T. Brandes, et al.
EPL
M. Arafa, P. Fay, et al.
IEEE Electron Device Letters
P.M. Mooney, F. Legoues, et al.
MRS Fall Meeting 1993